20-Jun-2013 [ | E-mail | ] Contact: Melissa Van De Werfhorstmelissa@engineering.ucsb.edu 805-893-4301University of California – Santa Barbara UC Santa Barbara researchers demonstrate first n-type field effect transistors on monolayer tungsten diselenide with record performance …
Source:2-dimensional atomically-flat transistors show promise for next generation green electronics
Friday, June 21, 2013
2-dimensional atomically-flat transistors show promise for next generation green electronics
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